Weak antilocalization and low-temperature characterization of sputtered polycrystalline bismuth selenide

Protyush Sahu; Jun Yang Chen; Jason C. Myers; Jian Ping Wang

doi:10.1063/1.5020788

Weak antilocalization and low-temperature characterization of sputtered polycrystalline bismuth selenide

Protyush Sahu, Jun Yang Chen, Jason C. Myers, Jian Ping Wang

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Abstract

We report a thorough crystal and transport characterization of sputtered polycrystalline BixSe1-x (20 nm), grown on a thermally oxidized silicon substrate. The crystal and grain structures of the sample are characterized by transmission electron microscopy. Selected-area electron diffraction shows a highly polycrystalline structure. Transport measurements suggest semiconducting behavior of the BixSe1-x film with a very high carrier concentration (∼10²⁰ cm³) and low mobility [∼8 cm²/(V s)]. High-field magnetoresistance measurements reveal weak antilocalization, to which both the low mobility and the angular dependence suggest an impurity-dominated contribution. Fitting parameters are obtained from 2D magnetoconductivity using the Hikami-Larkin-Nagaoka equation. The variation of the phase coherence length with temperature suggests electron-electron scattering for phase decoherence. Electron-electron interaction theory is used to analyze the low-temperature conductivity.

Original language	English (US)
Article number	122402
Journal	Applied Physics Letters
Volume	112
Issue number	12
DOIs	https://doi.org/10.1063/1.5020788
State	Published - Mar 19 2018

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title = "Weak antilocalization and low-temperature characterization of sputtered polycrystalline bismuth selenide",

abstract = "We report a thorough crystal and transport characterization of sputtered polycrystalline BixSe1-x (20 nm), grown on a thermally oxidized silicon substrate. The crystal and grain structures of the sample are characterized by transmission electron microscopy. Selected-area electron diffraction shows a highly polycrystalline structure. Transport measurements suggest semiconducting behavior of the BixSe1-x film with a very high carrier concentration (∼1020 cm3) and low mobility [∼8 cm2/(V s)]. High-field magnetoresistance measurements reveal weak antilocalization, to which both the low mobility and the angular dependence suggest an impurity-dominated contribution. Fitting parameters are obtained from 2D magnetoconductivity using the Hikami-Larkin-Nagaoka equation. The variation of the phase coherence length with temperature suggests electron-electron scattering for phase decoherence. Electron-electron interaction theory is used to analyze the low-temperature conductivity.",

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AU - Sahu, Protyush

AU - Chen, Jun Yang

AU - Myers, Jason C.

AU - Wang, Jian Ping

PY - 2018/3/19

Y1 - 2018/3/19

N2 - We report a thorough crystal and transport characterization of sputtered polycrystalline BixSe1-x (20 nm), grown on a thermally oxidized silicon substrate. The crystal and grain structures of the sample are characterized by transmission electron microscopy. Selected-area electron diffraction shows a highly polycrystalline structure. Transport measurements suggest semiconducting behavior of the BixSe1-x film with a very high carrier concentration (∼1020 cm3) and low mobility [∼8 cm2/(V s)]. High-field magnetoresistance measurements reveal weak antilocalization, to which both the low mobility and the angular dependence suggest an impurity-dominated contribution. Fitting parameters are obtained from 2D magnetoconductivity using the Hikami-Larkin-Nagaoka equation. The variation of the phase coherence length with temperature suggests electron-electron scattering for phase decoherence. Electron-electron interaction theory is used to analyze the low-temperature conductivity.

AB - We report a thorough crystal and transport characterization of sputtered polycrystalline BixSe1-x (20 nm), grown on a thermally oxidized silicon substrate. The crystal and grain structures of the sample are characterized by transmission electron microscopy. Selected-area electron diffraction shows a highly polycrystalline structure. Transport measurements suggest semiconducting behavior of the BixSe1-x film with a very high carrier concentration (∼1020 cm3) and low mobility [∼8 cm2/(V s)]. High-field magnetoresistance measurements reveal weak antilocalization, to which both the low mobility and the angular dependence suggest an impurity-dominated contribution. Fitting parameters are obtained from 2D magnetoconductivity using the Hikami-Larkin-Nagaoka equation. The variation of the phase coherence length with temperature suggests electron-electron scattering for phase decoherence. Electron-electron interaction theory is used to analyze the low-temperature conductivity.

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Weak antilocalization and low-temperature characterization of sputtered polycrystalline bismuth selenide

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