@inproceedings{9699b046b4b4479caf661007085ed390,
title = "Width-dependent statistical leakage modeling for random dopant induced threshold voltage shift",
abstract = "Statistical behavior of device leakage and threshold voltage shows a strong width dependency under microscopic random dopant fluctuation. Leakage estimation using the conventional square-root method shows a discrepancy as large as 45% compared to the real case because it fails to model the effective V T shift in the subthreshold region. This paper presents a width-dependent statistical leakage model with an estimation error less than 5%. Design examples on SRAMs and domino circuits demonstrate the significance of the proposed model.",
keywords = "Leakage, Process variation, Random dopant fluctuation",
author = "Jie Gu and Sapatnekar, {Sachin S.} and Chris Kim",
year = "2007",
month = aug,
day = "2",
doi = "10.1109/DAC.2007.375130",
language = "English (US)",
isbn = "1595936270",
series = "Proceedings - Design Automation Conference",
pages = "87--92",
booktitle = "2007 44th ACM/IEEE Design Automation Conference, DAC'07",
note = "2007 44th ACM/IEEE Design Automation Conference, DAC'07 ; Conference date: 04-06-2007 Through 08-06-2007",
}