@inproceedings{79da8c36bfc04b25b3d85d52f0d1117e,
title = "A 4 kbit synchronous static random access memory based upon delta-doped complementary heterostructure insulated gate field effect transistor technology",
abstract = "Delta-doped pseudomorphic InyGa1-yAs channel complementary heterostructure insulated gate field effect transistor (C-HIGFET) technology has been developed for LSI complementary circuits which exhibit extremely low power dissipation while maintaining the high-speed operation characteristic of III-V heterostructure FETs. Using C-HIGFET ring oscillators with 1 μm gate lengths, a gate delay of 206 ps was obtained with a gate standby power of only 3.96 μW/gate and a switching-power-delay product of 145 fJ/gate. The authors have also fabricated fully functional 1K × 4 static random access memories (SRAMs) using this delta-doped C-HIGFET technology. The synchronous 1K × 4 SRAMs operate at a clock frequency of 284 MHz with a total power dissipation of only 183 mW.",
author = "Grider, {D. E.} and Mactaggart, {I. R.} and Nohava, {J. C.} and Stronczer, {J. J.} and Ruden, {P. P.} and Nohava, {T. E.} and D. Fulkerson and Tetzlaff, {D. E.}",
year = "1992",
month = jan,
day = "1",
language = "English (US)",
isbn = "078030196X",
series = "Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)",
publisher = "Publ by IEEE",
pages = "71--74",
booktitle = "Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)",
note = "13th Annual GaAs IC Symposium Technical Digest ; Conference date: 20-10-1991 Through 23-10-1991",
}