Amorphous mixed TiO2 and SiO2 films on Si(100) by chemical vapor deposition

R. C. Smith; C. J. Taylor; J. Roberts; N. Hoilien; S. A. Campbell; W. L. Gladfelter

Amorphous mixed TiO₂ and SiO₂ films on Si(100) by chemical vapor deposition

R. C. Smith, C. J. Taylor, J. Roberts, N. Hoilien, S. A. Campbell, W. L. Gladfelter

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Amorphous thin films of composition Ti_xSi_1-xO₂ have been grown by low pressure chemical vapor deposition on silicon (100) substrates using Si(O-Et)₄ and either Ti(O-ⁱPr)₄ or anhydrous Ti(NO₃)₄ as the sources of SiO₂ and TiO₂, respectively. The substrate temperature was varied between 300 and 535°C, and the precursor flow rates ranged from 5 to 100 sccm. Under these conditions growth rates ranging from 0.6 to 90.0 nm/min were observed. As-deposited films were amorphous to X-rays and SEM micrographs showed smooth, featureless film surfaces. Cross-sectional TEM showed no compositional inhomogeneity. RBS revealed that x (from the formula Ti_xSi_1-xO₂) was dependent upon the choice of TiO₂ precursor. For films grown using TTIP-TEOS x could be varied by systematic variation of the deposition conditions. For the case of TN-TEOS x remained close to 0.5 under all conditions studied. One explanation is the existence of a specific chemical reaction between TN and TEOS prior to film deposition. TEOS was mixed with a CCl₄ solution of TN at room temperature to produce an amorphous white powder (Ti/Si = 1.09) and ¹HNMR of the CCl₄ solution indicated resonances attributable to ethyl nitrate.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Editors	L.A. Clenvenger, S.A. Campbell, P.R. Besser, S.B. Herner, J. Kittl
Volume	611
State	Published - 2001
Event	Gate Stack and Silicide Issues in Silicon Processing - San Francisco, CA, United States Duration: Apr 25 2000 → Apr 27 2000

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Other	Gate Stack and Silicide Issues in Silicon Processing
Country/Territory	United States
City	San Francisco, CA
Period	4/25/00 → 4/27/00

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Smith, RC, Taylor, CJ, Roberts, J, Hoilien, N, Campbell, SA & Gladfelter, WL 2001, Amorphous mixed TiO₂ and SiO₂ films on Si(100) by chemical vapor deposition. in LA Clenvenger, SA Campbell, PR Besser, SB Herner & J Kittl (eds), Materials Research Society Symposium - Proceedings. vol. 611, Gate Stack and Silicide Issues in Silicon Processing, San Francisco, CA, United States, 4/25/00.

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abstract = "Amorphous thin films of composition TixSi1-xO2 have been grown by low pressure chemical vapor deposition on silicon (100) substrates using Si(O-Et)4 and either Ti(O-iPr)4 or anhydrous Ti(NO3)4 as the sources of SiO2 and TiO2, respectively. The substrate temperature was varied between 300 and 535°C, and the precursor flow rates ranged from 5 to 100 sccm. Under these conditions growth rates ranging from 0.6 to 90.0 nm/min were observed. As-deposited films were amorphous to X-rays and SEM micrographs showed smooth, featureless film surfaces. Cross-sectional TEM showed no compositional inhomogeneity. RBS revealed that x (from the formula TixSi1-xO2) was dependent upon the choice of TiO2 precursor. For films grown using TTIP-TEOS x could be varied by systematic variation of the deposition conditions. For the case of TN-TEOS x remained close to 0.5 under all conditions studied. One explanation is the existence of a specific chemical reaction between TN and TEOS prior to film deposition. TEOS was mixed with a CCl4 solution of TN at room temperature to produce an amorphous white powder (Ti/Si = 1.09) and 1HNMR of the CCl4 solution indicated resonances attributable to ethyl nitrate.",

author = "Smith, {R. C.} and Taylor, {C. J.} and J. Roberts and N. Hoilien and Campbell, {S. A.} and Gladfelter, {W. L.}",

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editor = "L.A. Clenvenger and S.A. Campbell and P.R. Besser and S.B. Herner and J. Kittl",

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T1 - Amorphous mixed TiO2 and SiO2 films on Si(100) by chemical vapor deposition

AU - Smith, R. C.

AU - Taylor, C. J.

AU - Roberts, J.

AU - Hoilien, N.

AU - Campbell, S. A.

AU - Gladfelter, W. L.

PY - 2001

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N2 - Amorphous thin films of composition TixSi1-xO2 have been grown by low pressure chemical vapor deposition on silicon (100) substrates using Si(O-Et)4 and either Ti(O-iPr)4 or anhydrous Ti(NO3)4 as the sources of SiO2 and TiO2, respectively. The substrate temperature was varied between 300 and 535°C, and the precursor flow rates ranged from 5 to 100 sccm. Under these conditions growth rates ranging from 0.6 to 90.0 nm/min were observed. As-deposited films were amorphous to X-rays and SEM micrographs showed smooth, featureless film surfaces. Cross-sectional TEM showed no compositional inhomogeneity. RBS revealed that x (from the formula TixSi1-xO2) was dependent upon the choice of TiO2 precursor. For films grown using TTIP-TEOS x could be varied by systematic variation of the deposition conditions. For the case of TN-TEOS x remained close to 0.5 under all conditions studied. One explanation is the existence of a specific chemical reaction between TN and TEOS prior to film deposition. TEOS was mixed with a CCl4 solution of TN at room temperature to produce an amorphous white powder (Ti/Si = 1.09) and 1HNMR of the CCl4 solution indicated resonances attributable to ethyl nitrate.

AB - Amorphous thin films of composition TixSi1-xO2 have been grown by low pressure chemical vapor deposition on silicon (100) substrates using Si(O-Et)4 and either Ti(O-iPr)4 or anhydrous Ti(NO3)4 as the sources of SiO2 and TiO2, respectively. The substrate temperature was varied between 300 and 535°C, and the precursor flow rates ranged from 5 to 100 sccm. Under these conditions growth rates ranging from 0.6 to 90.0 nm/min were observed. As-deposited films were amorphous to X-rays and SEM micrographs showed smooth, featureless film surfaces. Cross-sectional TEM showed no compositional inhomogeneity. RBS revealed that x (from the formula TixSi1-xO2) was dependent upon the choice of TiO2 precursor. For films grown using TTIP-TEOS x could be varied by systematic variation of the deposition conditions. For the case of TN-TEOS x remained close to 0.5 under all conditions studied. One explanation is the existence of a specific chemical reaction between TN and TEOS prior to film deposition. TEOS was mixed with a CCl4 solution of TN at room temperature to produce an amorphous white powder (Ti/Si = 1.09) and 1HNMR of the CCl4 solution indicated resonances attributable to ethyl nitrate.

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M3 - Conference contribution

AN - SCOPUS:0035031149

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BT - Materials Research Society Symposium - Proceedings

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T2 - Gate Stack and Silicide Issues in Silicon Processing

Y2 - 25 April 2000 through 27 April 2000

ER -

Amorphous mixed TiO₂ and SiO₂ films on Si(100) by chemical vapor deposition

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