Effects of TMSb overpressure on InSb surface morphology for InSb epitaxial growth using low pressure metalorganic chemical vapor deposition

Sehun Park; Jinwook Jung; Chulkyun Seok; Keun Wook Shin; Sung Hyun Park; Yasushi Nanishi; Yongjo Park; Euijoon Yoon

doi:10.1016/j.jcrysgro.2013.10.062

Effects of TMSb overpressure on InSb surface morphology for InSb epitaxial growth using low pressure metalorganic chemical vapor deposition

Sehun Park, Jinwook Jung, Chulkyun Seok, Keun Wook Shin, Sung Hyun Park, Yasushi Nanishi, Yongjo Park, Euijoon Yoon

Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We investigated the effects of antimony (Sb) overpressure during thermal cleaning (TC) on the surface morphology of InSb substrates using low pressure metalorganic chemical vapor deposition (LP-MOCVD). During the TC process under H₂ambient, indium (In) droplets were observed inside etch pits on InSb(001) surfaces due to the Sb evaporation from InSb substrates. On the other hand, when InSb substrates were thermally cleaned under trimethylantimony (TMSb) ambient, the formation of In droplets and the etch pits were suppressed, resulting in the smooth InSb surface. The surface morphology of InSb was dependent on TC temperature. Rough surface morphology was observed at low TC temperature of 435 °C and it became smoother with increasing TC temperature. The improvement of surface morphology was caused by the surface stabilization with increasing Sb flux and the increase of adatom migration. The dependence of TMSb flow rate on the surface morphology was also investigated. The TMSb overpressure during the TC of InSb must be maintained to grow high quality InSb epitaxial layers with smooth surface using MOCVD.

Original language	English (US)
Pages (from-to)	518-522
Number of pages	5
Journal	Journal of Crystal Growth
Volume	401
DOIs	https://doi.org/10.1016/j.jcrysgro.2013.10.062
State	Published - Sep 1 2014

Bibliographical note

Funding Information:
This work is supported by the DAPA and ADD , and by the WCU (World Class University) program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology ( R31-2008-000–10075-0 ). We also wish to express thanks to the staff and crew of the Seoul National University SPM facility for their untiring efforts and perseverance.

Publisher Copyright:
© 2013 Elsevier B.V.

Keywords

A1. Surfaces
A3. Metalorganic chemical vapor deposition
B1. Antimonides
B2. Semiconducting III-V materials
B2. Semiconducting indium compounds
B3. Infrared devices

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title = "Effects of TMSb overpressure on InSb surface morphology for InSb epitaxial growth using low pressure metalorganic chemical vapor deposition",

abstract = "We investigated the effects of antimony (Sb) overpressure during thermal cleaning (TC) on the surface morphology of InSb substrates using low pressure metalorganic chemical vapor deposition (LP-MOCVD). During the TC process under H2ambient, indium (In) droplets were observed inside etch pits on InSb(001) surfaces due to the Sb evaporation from InSb substrates. On the other hand, when InSb substrates were thermally cleaned under trimethylantimony (TMSb) ambient, the formation of In droplets and the etch pits were suppressed, resulting in the smooth InSb surface. The surface morphology of InSb was dependent on TC temperature. Rough surface morphology was observed at low TC temperature of 435 °C and it became smoother with increasing TC temperature. The improvement of surface morphology was caused by the surface stabilization with increasing Sb flux and the increase of adatom migration. The dependence of TMSb flow rate on the surface morphology was also investigated. The TMSb overpressure during the TC of InSb must be maintained to grow high quality InSb epitaxial layers with smooth surface using MOCVD.",

keywords = "A1. Surfaces, A3. Metalorganic chemical vapor deposition, B1. Antimonides, B2. Semiconducting III-V materials, B2. Semiconducting indium compounds, B3. Infrared devices",

author = "Sehun Park and Jinwook Jung and Chulkyun Seok and Shin, {Keun Wook} and {Hyun Park}, Sung and Yasushi Nanishi and Yongjo Park and Euijoon Yoon",

note = "Funding Information: This work is supported by the DAPA and ADD , and by the WCU (World Class University) program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology ( R31-2008-000–10075-0 ). We also wish to express thanks to the staff and crew of the Seoul National University SPM facility for their untiring efforts and perseverance. Publisher Copyright: {\textcopyright} 2013 Elsevier B.V.",

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doi = "10.1016/j.jcrysgro.2013.10.062",

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T1 - Effects of TMSb overpressure on InSb surface morphology for InSb epitaxial growth using low pressure metalorganic chemical vapor deposition

AU - Park, Sehun

AU - Jung, Jinwook

AU - Seok, Chulkyun

AU - Shin, Keun Wook

AU - Hyun Park, Sung

AU - Nanishi, Yasushi

AU - Park, Yongjo

AU - Yoon, Euijoon

N1 - Funding Information: This work is supported by the DAPA and ADD , and by the WCU (World Class University) program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology ( R31-2008-000–10075-0 ). We also wish to express thanks to the staff and crew of the Seoul National University SPM facility for their untiring efforts and perseverance. Publisher Copyright: © 2013 Elsevier B.V.

PY - 2014/9/1

Y1 - 2014/9/1

N2 - We investigated the effects of antimony (Sb) overpressure during thermal cleaning (TC) on the surface morphology of InSb substrates using low pressure metalorganic chemical vapor deposition (LP-MOCVD). During the TC process under H2ambient, indium (In) droplets were observed inside etch pits on InSb(001) surfaces due to the Sb evaporation from InSb substrates. On the other hand, when InSb substrates were thermally cleaned under trimethylantimony (TMSb) ambient, the formation of In droplets and the etch pits were suppressed, resulting in the smooth InSb surface. The surface morphology of InSb was dependent on TC temperature. Rough surface morphology was observed at low TC temperature of 435 °C and it became smoother with increasing TC temperature. The improvement of surface morphology was caused by the surface stabilization with increasing Sb flux and the increase of adatom migration. The dependence of TMSb flow rate on the surface morphology was also investigated. The TMSb overpressure during the TC of InSb must be maintained to grow high quality InSb epitaxial layers with smooth surface using MOCVD.

AB - We investigated the effects of antimony (Sb) overpressure during thermal cleaning (TC) on the surface morphology of InSb substrates using low pressure metalorganic chemical vapor deposition (LP-MOCVD). During the TC process under H2ambient, indium (In) droplets were observed inside etch pits on InSb(001) surfaces due to the Sb evaporation from InSb substrates. On the other hand, when InSb substrates were thermally cleaned under trimethylantimony (TMSb) ambient, the formation of In droplets and the etch pits were suppressed, resulting in the smooth InSb surface. The surface morphology of InSb was dependent on TC temperature. Rough surface morphology was observed at low TC temperature of 435 °C and it became smoother with increasing TC temperature. The improvement of surface morphology was caused by the surface stabilization with increasing Sb flux and the increase of adatom migration. The dependence of TMSb flow rate on the surface morphology was also investigated. The TMSb overpressure during the TC of InSb must be maintained to grow high quality InSb epitaxial layers with smooth surface using MOCVD.

KW - A1. Surfaces

KW - A3. Metalorganic chemical vapor deposition

KW - B1. Antimonides

KW - B2. Semiconducting III-V materials

KW - B2. Semiconducting indium compounds

KW - B3. Infrared devices

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SN - 0022-0248

VL - 401

SP - 518

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JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Effects of TMSb overpressure on InSb surface morphology for InSb epitaxial growth using low pressure metalorganic chemical vapor deposition

Abstract

Bibliographical note

Keywords

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