Fabrication and characterization of poly(3,4-ethylenedioxythiophene) field-effect transistors

Engineering & Materials Science

• Field effect transistors 100%
• Semiconductor materials 82%
• Organic field effect transistors 78%
• Spin coating 69%
• Fabrication 69%
• Reactive ion etching 63%
• Threshold voltage 51%
• Lithography 50%
• Masks 44%
• Thin films 44%
• Silicon 36%
• Aluminum 36%
• Substrates 33%
• Temperature 18%

Physics & Astronomy

• field effect transistors 73%
• p-type semiconductors 59%
• fabrication 56%
• characterization 52%
• threshold voltage 44%
• coating 42%
• masks 39%
• lithography 39%
• slopes 35%
• atmospheres 33%
• aluminum 32%
• room temperature 26%
• silicon 25%
• thin films 24%

Chemical Compounds

• Field Effect 92%
• Semiconductor 71%
• Spin Coating 48%
• Dielectric Material 41%
• Compound Mobility 35%
• Voltage 33%
• Ambient Reaction Temperature 26%