Gas-assisted electron-beam-induced nanopatterning of high-quality Si-based insulator

A. V. Riazanova; B. N. Costanzi; A. Aristov; Y. G.M. Rikers; V. Ström; J. J.L. Mulders; A. V. Kabashin; E. Dan Dahlberg; L. M. Belova

doi:10.1088/0957-4484/25/15/155301

Gas-assisted electron-beam-induced nanopatterning of high-quality Si-based insulator

A. V. Riazanova, B. N. Costanzi, A. Aristov, Y. G.M. Rikers, V. Ström, J. J.L. Mulders, A. V. Kabashin, E. Dan Dahlberg, L. M. Belova

Physics and Astronomy (Twin Cities)

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

An oxygen-assisted electron-beam-induced deposition (EBID) process, in which an oxygen flow and the vapor phase of the precursor, tetraethyl orthosilicate (TEOS), are both mixed and delivered through a single needle, is described. The optical properties of the SiO_(2+δ) (- 0.04 ≤ δ ≤ +0.28) are comparable to fused silica. The electrical resistivity of both single-needle and double-needle SiO_(2+δ) are comparable (greater than 7 GΩ cm) and a measured breakdown field is greater than 400 V μm^-1. Compared to the double-needle process the advantage of the single-needle technique is the ease of alignment and the proximity to the deposition location, which facilitates fabrication of complex 3D structures for nanophotonics, photovoltaics, micro- and nano-electronics applications.

Original language	English (US)
Article number	155301
Journal	Nanotechnology
Volume	25
Issue number	15
DOIs	https://doi.org/10.1088/0957-4484/25/15/155301
State	Published - Apr 18 2014

Keywords

3D nanopatterning
gas assisted EBID
highpurity insulator
purification
tetraethyl orthosilicate (TEOS)

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title = "Gas-assisted electron-beam-induced nanopatterning of high-quality Si-based insulator",

abstract = "An oxygen-assisted electron-beam-induced deposition (EBID) process, in which an oxygen flow and the vapor phase of the precursor, tetraethyl orthosilicate (TEOS), are both mixed and delivered through a single needle, is described. The optical properties of the SiO(2+δ) (- 0.04 ≤ δ ≤ +0.28) are comparable to fused silica. The electrical resistivity of both single-needle and double-needle SiO(2+δ) are comparable (greater than 7 GΩ cm) and a measured breakdown field is greater than 400 V μm-1. Compared to the double-needle process the advantage of the single-needle technique is the ease of alignment and the proximity to the deposition location, which facilitates fabrication of complex 3D structures for nanophotonics, photovoltaics, micro- and nano-electronics applications.",

keywords = "3D nanopatterning, gas assisted EBID, highpurity insulator, purification, tetraethyl orthosilicate (TEOS)",

author = "Riazanova, {A. V.} and Costanzi, {B. N.} and A. Aristov and Rikers, {Y. G.M.} and V. Str{\"o}m and Mulders, {J. J.L.} and Kabashin, {A. V.} and Dahlberg, {E. Dan} and Belova, {L. M.}",

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T1 - Gas-assisted electron-beam-induced nanopatterning of high-quality Si-based insulator

AU - Riazanova, A. V.

AU - Costanzi, B. N.

AU - Aristov, A.

AU - Rikers, Y. G.M.

AU - Ström, V.

AU - Mulders, J. J.L.

AU - Kabashin, A. V.

AU - Dahlberg, E. Dan

AU - Belova, L. M.

PY - 2014/4/18

Y1 - 2014/4/18

N2 - An oxygen-assisted electron-beam-induced deposition (EBID) process, in which an oxygen flow and the vapor phase of the precursor, tetraethyl orthosilicate (TEOS), are both mixed and delivered through a single needle, is described. The optical properties of the SiO(2+δ) (- 0.04 ≤ δ ≤ +0.28) are comparable to fused silica. The electrical resistivity of both single-needle and double-needle SiO(2+δ) are comparable (greater than 7 GΩ cm) and a measured breakdown field is greater than 400 V μm-1. Compared to the double-needle process the advantage of the single-needle technique is the ease of alignment and the proximity to the deposition location, which facilitates fabrication of complex 3D structures for nanophotonics, photovoltaics, micro- and nano-electronics applications.

AB - An oxygen-assisted electron-beam-induced deposition (EBID) process, in which an oxygen flow and the vapor phase of the precursor, tetraethyl orthosilicate (TEOS), are both mixed and delivered through a single needle, is described. The optical properties of the SiO(2+δ) (- 0.04 ≤ δ ≤ +0.28) are comparable to fused silica. The electrical resistivity of both single-needle and double-needle SiO(2+δ) are comparable (greater than 7 GΩ cm) and a measured breakdown field is greater than 400 V μm-1. Compared to the double-needle process the advantage of the single-needle technique is the ease of alignment and the proximity to the deposition location, which facilitates fabrication of complex 3D structures for nanophotonics, photovoltaics, micro- and nano-electronics applications.

KW - 3D nanopatterning

KW - gas assisted EBID

KW - highpurity insulator

KW - purification

KW - tetraethyl orthosilicate (TEOS)

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JO - Nanotechnology

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ER -

Gas-assisted electron-beam-induced nanopatterning of high-quality Si-based insulator

Abstract

Keywords

UN SDGs

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