High performance 0.15 μm self-aligned SiGe p-MOS-MODFET's with SiN gate dielectric

Engineering & Materials Science

• Gate dielectrics 80%
• Silicon nitride 68%
• Transconductance 67%
• Oxide semiconductors 66%
• Cutoff frequency 64%
• Leakage currents 60%
• Field effect transistors 60%
• Vapors 50%
• Metals 36%

Chemical Compounds

• Current Gain 100%
• Transconductance 86%
• Leakage Current 73%
• Field Effect 55%
• Nitride 54%
• Dielectric Material 49%

Physics & Astronomy

• vapor jets 31%
• performance 24%
• p-type semiconductors 24%
• transconductance 20%
• metal oxide semiconductors 19%
• silicon nitrides 18%
• unity 17%
• cut-off 15%
• leakage 15%
• field effect transistors 14%
• oscillations 11%