Linear in-plane uniaxial stress effects on the device characteristics of AlGaAs/GaAs modulation doped field effect transistors

A. K. Fung; L. Cong; J. D. Albrecht; M. I. Nathan; P. P. Ruden; H. Shtrikman

doi:10.1063/1.364126

Linear in-plane uniaxial stress effects on the device characteristics of AlGaAs/GaAs modulation doped field effect transistors

A. K. Fung, L. Cong, J. D. Albrecht, M. I. Nathan, P. P. Ruden, H. Shtrikman

Electrical and Computer Engineering

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Abstract

The current voltage relationships of AlGaAs/GaAs modulation doped field effect transistors (MODFETs) were measured as a function of applied uniaxial stress. Stresses in the [110] and [110] directions on MODFETs that were grown on a (001) substrate produced threshold shifts of opposite sign. Stresses in [110] and [110] directions resulted in threshold voltage pressure coefficients of -15 and 64 mV/Kbar, respectively. The asymmetric shifts in the threshold voltages are attributed to piezoelectric effects. In addition, stress induced changes in the slopes of the transconductance versus gate-to-source voltage relationships were also measured. For stresses in the [110] and [110] directions, the dependencies were 0.4 and -0.7 mS/(V Kbar), respectively.

Original language	English (US)
Pages (from-to)	502-505
Number of pages	4
Journal	Journal of Applied Physics
Volume	81
Issue number	1
DOIs	https://doi.org/10.1063/1.364126
State	Published - Jan 1 1997

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title = "Linear in-plane uniaxial stress effects on the device characteristics of AlGaAs/GaAs modulation doped field effect transistors",

abstract = "The current voltage relationships of AlGaAs/GaAs modulation doped field effect transistors (MODFETs) were measured as a function of applied uniaxial stress. Stresses in the [110] and [110] directions on MODFETs that were grown on a (001) substrate produced threshold shifts of opposite sign. Stresses in [110] and [110] directions resulted in threshold voltage pressure coefficients of -15 and 64 mV/Kbar, respectively. The asymmetric shifts in the threshold voltages are attributed to piezoelectric effects. In addition, stress induced changes in the slopes of the transconductance versus gate-to-source voltage relationships were also measured. For stresses in the [110] and [110] directions, the dependencies were 0.4 and -0.7 mS/(V Kbar), respectively.",

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AU - Fung, A. K.

AU - Cong, L.

AU - Albrecht, J. D.

AU - Nathan, M. I.

AU - Ruden, P. P.

AU - Shtrikman, H.

PY - 1997/1/1

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N2 - The current voltage relationships of AlGaAs/GaAs modulation doped field effect transistors (MODFETs) were measured as a function of applied uniaxial stress. Stresses in the [110] and [110] directions on MODFETs that were grown on a (001) substrate produced threshold shifts of opposite sign. Stresses in [110] and [110] directions resulted in threshold voltage pressure coefficients of -15 and 64 mV/Kbar, respectively. The asymmetric shifts in the threshold voltages are attributed to piezoelectric effects. In addition, stress induced changes in the slopes of the transconductance versus gate-to-source voltage relationships were also measured. For stresses in the [110] and [110] directions, the dependencies were 0.4 and -0.7 mS/(V Kbar), respectively.

AB - The current voltage relationships of AlGaAs/GaAs modulation doped field effect transistors (MODFETs) were measured as a function of applied uniaxial stress. Stresses in the [110] and [110] directions on MODFETs that were grown on a (001) substrate produced threshold shifts of opposite sign. Stresses in [110] and [110] directions resulted in threshold voltage pressure coefficients of -15 and 64 mV/Kbar, respectively. The asymmetric shifts in the threshold voltages are attributed to piezoelectric effects. In addition, stress induced changes in the slopes of the transconductance versus gate-to-source voltage relationships were also measured. For stresses in the [110] and [110] directions, the dependencies were 0.4 and -0.7 mS/(V Kbar), respectively.

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Linear in-plane uniaxial stress effects on the device characteristics of AlGaAs/GaAs modulation doped field effect transistors

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