Linear in-plane uniaxial stress effects on the device characteristics of AlGaAs/GaAs modulation doped field effect transistors

A. K. Fung, L. Cong, J. D. Albrecht, M. I. Nathan, P. P. Ruden, H. Shtrikman

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

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Physics & Astronomy