Nano CMOS device quantum simulation: Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistors

Tony Low, M. F. Li, Chen Shen, Yee Chia Yeo, Y. T. Hou, Chunxiang Zhu, Albert Chin, D. L. Kwong

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Electron mobility in strained silicon and various surface oriented Germanium ultrathin-body (UTB) metal-oxide semiconductor field-effect transistors (MOSFETs) with sub-10-nm-body thickness are systematically studied. For biaxial tensile strained-Si UTB MOSFETs, strain effects offer mobility enhancement down to a body thickness of 3 nm, below which strong quantum confinement effect renders further valley splitting via application of strain redundant. For Ge channel UTB MOSFETs, electron mobility is found to be highly dependent on surface orientation. Ge(100) and Ge(110) surfaces have low quantization mass that leads to a lower mobility than that of Si in aggressively scaled UTB MOSFETs.

Original languageEnglish (US)
Title of host publicationSelected Semiconductor Research
PublisherImperial College Press
Pages438-440
Number of pages3
ISBN (Electronic)9781848164079
ISBN (Print)9781848164062
DOIs
StatePublished - Jan 1 2011

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