p-Type SiGe transistors with low gate leakage using SiN gate dielectric

Engineering & Materials Science

• Ultrahigh vacuum 88%
• Gate dielectrics 80%
• Heterojunctions 73%
• Transconductance 67%
• Chemical vapor deposition 65%
• Cutoff frequency 64%
• Leakage currents 60%
• Vapors 50%
• Transistors 48%

Chemical Compounds

• Current Gain 100%
• Transconductance 86%
• Leakage Current 73%
• Chemical Vapour Deposition 50%
• Dielectric Material 49%