Performance analysis of III-V materials in a double-gate nano-MOSFET

Chemical Compounds

• Effective Mass 100%
• Tight-Binding Method 53%
• Electronic Band Structure 35%
• Electron Transport 34%
• Simulation 22%
• Length 21%
• Application 11%

Physics & Astronomy

• field effect transistors 55%
• ballistics 46%
• thin bodies 34%
• performance 31%
• silicon 25%
• valleys 23%
• logic 23%
• scaling 16%
• electrons 10%
• simulation 9%

Engineering & Materials Science

• Ballistics 78%
• Electron Transport 56%
• Silicon 56%
• Band structure 49%
• Computer simulation 19%