@inproceedings{afeb1df58ac84fa6bb7d16eb28d4db80,
title = "Post-Si CMOS: III-V n-MOSFETs with high-k gate dielectrics",
abstract = "As the end of Si CMOS scaling is approaching, III-V compound semiconductors have received renewed attention as the channel materials for future generation CMOS technology. We have reviewed the benefits, the opportunities, and the challenges of III-Vs for digital applications. We have also demonstrated functional enhancement-mode GaAs- , and InGaAs- channel MOSFETs, with high-j gate dielectrics. The results show promise for realizing III-V MOSFETs for future VLSI logic applications.",
keywords = "Buried-channel, Dielectric, Enhancement-mode, High-k, III-V, Mosfet",
author = "Yanning Sun and Koester, {S. J.} and Kiewra, {E. W.} and {De Souza}, {J. P.} and N. Ruiz and Bucchignano, {J. J.} and A. Callegari and Fogel, {K. E.} and Sadana, {D. K.} and J. Fompeyrine and Webb, {D. J.} and Locquet, {J. P.} and M. Sousa and R. Germann",
year = "2007",
month = dec,
day = "1",
language = "English (US)",
isbn = "1893580091",
series = "2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007",
pages = "231--234",
booktitle = "2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007",
note = "22nd International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007 ; Conference date: 14-05-2007 Through 17-05-2007",
}