Short channel effects in submicron self-aligned gate heterostructure field effect transistors

C. J. Han, P. P. Ruden, D. Grider, A. Fraasch, K. Newstrom, P. Joslyn, M. Shur

Research output: Contribution to journalConference articlepeer-review

12 Scopus citations

Abstract

Self-aligned gate heterostructure FETs with gate lengths varying from 0.3 to 1.5 μm were fabricated to study short-channel effects. Peak extrinsic transconductance as high as 360 mS/mm was achieved with this process. Short-channel effects such as increases in the output conductance, increases in the subthreshold current, and shifts in the threshold voltage are reported for temperatures ranging from 30°C to 100°C. The observations follow closely predictions from a simple model which attributes the effects to space-charge-limited electron injection into the GaAs buffer layer beneath the actual two-dimensional electron gas channel.

Original languageEnglish (US)
Pages (from-to)696-699
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - Dec 1 1988
EventTechnical Digest - International Electron Devices Meeting 1988 - San Francisco, CA, USA
Duration: Dec 11 1988Dec 14 1988

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