Short channel effects in submicron self-aligned gate heterostructure field effect transistors

Engineering & Materials Science

• Buffer layers 80%
• Gates (transistor) 79%
• Electric space charge 74%
• Heterojunctions 73%
• Transconductance 67%
• Threshold voltage 61%
• Field effect transistors 60%
• Temperature 22%

Chemical Compounds

• Two-Dimensional Electron Gas 100%
• Transconductance 86%
• Field Effect 55%
• Conductance 53%
• Voltage 40%
• Buffer Solution 36%
• Length 33%
• Electron Particle 30%

Physics & Astronomy

• field effect transistors 44%
• transconductance 20%
• electron gas 17%
• threshold voltage 17%
• space charge 16%
• buffers 15%
• injection 13%
• shift 11%
• output 11%
• predictions 10%
• electrons 7%
• temperature 5%