SiGe pMODFETs on silicon-on-sapphire substrates with 116 GHz fmax

S. J. Koester, R. Hammond, J. O. Chu, P. M. Mooney, J. A. Ott, L. Perraud, K. A. Jenkins, C. S. Webster, I. Lagnado, P. R. De La Houssaye

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