Strained Si NMOSFETs for high performance CMOS technology

K. Rim; S. Koester; M. Hargrove; J. Chu; P. M. Mooney; J. Ott; T. Kanarsky; P. Ronsheim; M. Ieong; A. Grill; H. S.P. Wong

Strained Si NMOSFETs for high performance CMOS technology

K. Rim, S. Koester, M. Hargrove, J. Chu, P. M. Mooney, J. Ott, T. Kanarsky, P. Ronsheim, M. Ieong, A. Grill, H. S.P. Wong

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201 Scopus citations

Abstract

Performance enhancements in strained Si NMOSFETs were demonstrated at L_eff <70 nm. A 70% increase in electron mobility was observed at vertical fields as high as 1.5 MV/cm for the first time, suggesting a new mobility enhancement mechanism in addition to reduced phonon scattering. Current drive increase by ≥-35% was observed at L_eff <70 nm. These results indicate that strain can be used to improve CMOS device performance at sub-100 nm technology nodes.

Original language	English (US)
Pages	59-60
Number of pages	2
State	Published - Jan 1 2001
Externally published	Yes
Event	2001 VLSI Technology Symposium - Kyoto, Japan Duration: Jun 12 2001 → Jun 14 2001

Other

Other	2001 VLSI Technology Symposium
Country/Territory	Japan
City	Kyoto
Period	6/12/01 → 6/14/01

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title = "Strained Si NMOSFETs for high performance CMOS technology",

abstract = "Performance enhancements in strained Si NMOSFETs were demonstrated at Leff <70 nm. A 70% increase in electron mobility was observed at vertical fields as high as 1.5 MV/cm for the first time, suggesting a new mobility enhancement mechanism in addition to reduced phonon scattering. Current drive increase by ≥-35% was observed at Leff <70 nm. These results indicate that strain can be used to improve CMOS device performance at sub-100 nm technology nodes.",

author = "K. Rim and S. Koester and M. Hargrove and J. Chu and Mooney, {P. M.} and J. Ott and T. Kanarsky and P. Ronsheim and M. Ieong and A. Grill and Wong, {H. S.P.}",

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T1 - Strained Si NMOSFETs for high performance CMOS technology

AU - Rim, K.

AU - Koester, S.

AU - Hargrove, M.

AU - Chu, J.

AU - Mooney, P. M.

AU - Ott, J.

AU - Kanarsky, T.

AU - Ronsheim, P.

AU - Ieong, M.

AU - Grill, A.

AU - Wong, H. S.P.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - Performance enhancements in strained Si NMOSFETs were demonstrated at Leff <70 nm. A 70% increase in electron mobility was observed at vertical fields as high as 1.5 MV/cm for the first time, suggesting a new mobility enhancement mechanism in addition to reduced phonon scattering. Current drive increase by ≥-35% was observed at Leff <70 nm. These results indicate that strain can be used to improve CMOS device performance at sub-100 nm technology nodes.

AB - Performance enhancements in strained Si NMOSFETs were demonstrated at Leff <70 nm. A 70% increase in electron mobility was observed at vertical fields as high as 1.5 MV/cm for the first time, suggesting a new mobility enhancement mechanism in addition to reduced phonon scattering. Current drive increase by ≥-35% was observed at Leff <70 nm. These results indicate that strain can be used to improve CMOS device performance at sub-100 nm technology nodes.

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T2 - 2001 VLSI Technology Symposium

Y2 - 12 June 2001 through 14 June 2001

ER -

Strained Si NMOSFETs for high performance CMOS technology

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