Performance enhancements in strained Si NMOSFETs were demonstrated at Leff <70 nm. A 70% increase in electron mobility was observed at vertical fields as high as 1.5 MV/cm for the first time, suggesting a new mobility enhancement mechanism in addition to reduced phonon scattering. Current drive increase by ≥-35% was observed at Leff <70 nm. These results indicate that strain can be used to improve CMOS device performance at sub-100 nm technology nodes.
|Original language||English (US)|
|Number of pages||2|
|State||Published - Jan 1 2001|
|Event||2001 VLSI Technology Symposium - Kyoto, Japan|
Duration: Jun 12 2001 → Jun 14 2001
|Other||2001 VLSI Technology Symposium|
|Period||6/12/01 → 6/14/01|